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	Semiconductor laser device
	SUGAWARA HIDETO; OBA YASUO
	1989-07-24
著作权人	TOSHIBA CORP
专利号	JP1989184972A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To decrease the effect of a barrier generated at an interface so as to decrease on operating voltage by a method wherein a super lattice layer and an intermediate band gap layer are provided between a clad layer large in a band gap and a contact layer small in a band gap. CONSTITUTION:A super lattice layer 16 provided with the same structured layer as a P-clad layer 15 and a P-intermediate band gap layer 17 are provided between the P-clad layer 15 and a P-GaAs electrode contact layer 18. The carrier concentration of the super lattice layer 16 and the intermediate band gap layer 17 are made higher than that of the P-clad layer 15. A P-super lattice layer and an intermediate band gap layer are formed as mentioned above, wherefore the height of the barrier at each interface can be decreased. And, as the P-electrode contact layer 18 can be doped in high concentration, the barrier can be decreased in height. By these processes, a semiconductor laser element low in an operating voltage and excellent in reliability can be obtained even if the element is a DH laser which has a large band gap difference between a clad layer and an electrode contact layer.
公开日期	1989-07-24
申请日期	1988-01-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88916]
专题	半导体激光器专利数据库
作者单位	TOSHIBA CORP
推荐引用方式 GB/T 7714	SUGAWARA HIDETO,OBA YASUO. Semiconductor laser device. JP1989184972A. 1989-07-24.

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