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	Surface light-emitting type semiconductor laser
	IMANAKA KOICHI
	1989-10-20
著作权人	OMRON TATEISI ELECTRON CO
专利号	JP1989264285A
国家	日本
文献子类	发明申请
其他题名	Surface light-emitting type semiconductor laser
英文摘要	PURPOSE:To have an optimum structure in an optoelectronic integrated circuit after completing a crystal growth at a time and obtain a high reflection factor by low contact resistance, by forming a lower reflecting mirror consisting of a semiconductor multilayer film on an n-type semiconductor substrate and forming an upper reflecting mirror by specific materials, thereby making a double heterostructure part columnar. CONSTITUTION:A multilayer reflecting film 4 is constructed by making semiconductor thin films 4A and 4B grow alternately to form a plurality of grouped multilayers. An upper reflecting mirror 8 acting as a p-side ohmic electrode concurrently is formed by depositing Ti, Pt and Au one after another. Positive holes injected from an upper electrode 10 or 8 are introduced into an active layer 6 through a clad layer 7 and electrons injected from a lower electrode 1 are introduced into the active layer 6 through an n-type semiconductor substrate 2, a buffer layer 3, the multilayer reflecting film 4, and a clad layer 5 and they recombine with each other to emit light. Its light is reflected between upper and lower reflecting mirrors 8 and 4 and is amplifired and then, a laser beam is emitted upwards. In such a case, each part of clad layers 7 and 5 and the active layer 6 is formed into the columnar shape which has nearly the same size as the diameter of the circular electrode 8. As there is an insulating layer 9 around them, an electric current flows only in columnar parts.
公开日期	1989-10-20
申请日期	1988-04-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88913]
专题	半导体激光器专利数据库
作者单位	OMRON TATEISI ELECTRON CO
推荐引用方式 GB/T 7714	IMANAKA KOICHI. Surface light-emitting type semiconductor laser. JP1989264285A. 1989-10-20.

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