QQ客服 官方微博 反馈留言

	Semiconductor light-emitting device
	YOKOZUKA TATSUO; TAKAMORI AKIRA
	1991-11-26
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1991265184A
国家	日本
文献子类	发明申请
其他题名	Semiconductor light-emitting device
英文摘要	PURPOSE:To prevent decrease in laser characteristics caused by oxidation of an active layer and prevent lifetime from shortening by forming clad layers, which have lattice-matched structures with a substrate and the band gaps of which are at least 0.25eV larger than that of the active layer. CONSTITUTION:In a structure consisting of an n-type electrode 18, a GaAs substrate 17, an n-AlGaInP clad layer 16, an undoped GayIn1-yP active layer 15, a p-AlGaInP clad layer 14, etc., the layers 14 and 16 are lattice-matched with the substrate 17 and the layer 15 is made of a distorted lattice structure. The layer 15 is lattice-matched with the substrate 17 composed of (AlxGa1-x)0.5 In0.5P (0<=x<=1) and the band gaps of the layers 14 and 16 are at least 0.25eV larger than that of the layer 15. Thereby a semiconductor light-emitting device having an oscillation wavelength under 0.67mum is obtained with the layer 15 not containing aluminum and the layer 15 is hardly oxidized even at a high operation temperature because the layer 15 does not contain aluminum. Therefore, characteristics do not decrease, lifetime is lengthened, and low power consumption coherent light is obtained.
公开日期	1991-11-26
申请日期	1990-03-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88835]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	YOKOZUKA TATSUO,TAKAMORI AKIRA. Semiconductor light-emitting device. JP1991265184A. 1991-11-26.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。