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	Method of forming diffraction lattice in semiconductor material and photoelectric device with the diffraction lattice manufactured by the method
	ROBEERU BURONDOO; DANIERU RONDEI; ANNU TARUNOO; JIERUBEEZU BIRAN; BOOTOUWAN DOU KURUMUU
	1989-08-28
著作权人	THOMSON CSF
专利号	JP1989214089A
国家	日本
文献子类	发明申请
其他题名	Method of forming diffraction lattice in semiconductor material and photoelectric device with the diffraction lattice manufactured by the method
英文摘要	PURPOSE: To provide an easy method for forming a diffraction grating of high optical efficiency with high manufacturing efficiency by forming the second layer of a thickness equal to the depth of a line of a grating to be formed on a stop layer, forming a mask providing a diffraction grating of a desired formation, and then, through the mask, chemically corroding the second layer until the entire thickness is removed. CONSTITUTION: A first layer 13, acting as a stop layer, which comprises the first semiconductor material and has a thickness of 0.005-0.02μ is deposited by epitaxial growth, and over it, the second layer 14, which comprises the second semiconductor material of a composition different from the first layer 13 and has a thickness of 0.01-0.03μ equal to a depth E of a line of a grating to be formed, is deposited by epitaxial growth. Then, a mask which provides a diffraction grating of desired formation is deposited, and, with a selective chemicals which does not corrode the material of the first layer 13, the second layer 14 is chemically corroded through the mask. After the action of the chemicals is continued until the entire thickness of the second layer 14 is removed, the mask is removed to form a diffraction grating. For example, the mask is formed by cutting a photosensitive resin layer into a form of desired diffraction grating.
公开日期	1989-08-28
申请日期	1988-12-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88478]
专题	半导体激光器专利数据库
作者单位	THOMSON CSF
推荐引用方式 GB/T 7714	ROBEERU BURONDOO,DANIERU RONDEI,ANNU TARUNOO,et al. Method of forming diffraction lattice in semiconductor material and photoelectric device with the diffraction lattice manufactured by the method. JP1989214089A. 1989-08-28.

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