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	Semiconductor laser device
	UNO TOMOAKI; ONOYA JIYUN
	1988-12-27
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1988318186A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To make the spectrum of a semiconductor laser narrower in width by a method wherein a specified one it the gain wavelengths of a semiconductor laser element is selectively and partially fed back and the refractive index is varied so as to control the specified wavelength. CONSTITUTION:A light waveguide array 2 and an output waveguide 8 are formed through diffusing Ti into an LiNbO3 crystal. A diffraction grating 4 is patterned through a dual light beam interference exposure method and formed by means of etching a LiNbO3 dielectric substrate 5 of a Z plate. The oscillating frequency of a semiconductor laser device is controlled by the voltage applied onto an electrode 3, using an electro-optical effect of the LiNbO3 substrate 5. The laser oscillation is generated between a reflecting coating 7 and the diffraction grating 4 and both a single longitudinal mode oscillation and a narrow spectrum width can be obtained at the same time.
公开日期	1988-12-27
申请日期	1987-06-19
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88392]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	UNO TOMOAKI,ONOYA JIYUN. Semiconductor laser device. JP1988318186A. 1988-12-27.

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