| Semiconductor light emitting element | |
| OTA, HIROYUKI; WATANABE, ATSUSHI | |
| 1994-02-09 | |
| 著作权人 | PIONEER ELECTRONIC CORPORATION |
| 专利号 | EP0487822B1 |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor light emitting element |
| 英文摘要 | A semiconductor light emitting element with a high light-emitting efficiency, which is constituted in such a way that, of the composition of its GaN and AlN epitaxial layer, part of N is substituted by P, thus ensuring good lattice-matching with the substrate crystal, ZnO. |
| 公开日期 | 1994-02-09 |
| 申请日期 | 1991-06-25 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/88302]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | PIONEER ELECTRONIC CORPORATION |
| 推荐引用方式 GB/T 7714 | OTA, HIROYUKI,WATANABE, ATSUSHI. Semiconductor light emitting element. EP0487822B1. 1994-02-09. |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论