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	Planar semiconductor light emitting device
	UCHIUMI TAKAO
	1985-01-16
著作权人	KOGYO GIJUTSUIN (JAPAN)
专利号	JP1985007789A
国家	日本
文献子类	发明申请
其他题名	Planar semiconductor light emitting device
英文摘要	PURPOSE:To obtain a light emitting device of a simple structure by providing the double hetero junction structure composed of a semi-insulating lower clad layer having wide energy gap of forbidden band, a crystal active layer having narrow energy gap of forbidden band and a semi-insulating upper clad layer having wide energy gap of forbidden band, each of which has the equal lattice constant, on the semi-insulating compound semiconductor substrate and by arranging P type and N type regions entering into the active layer from the surface. CONSTITUTION:The double hetero junction structure 15 having an active layer 12 interposed between a lower clad layer 13 and an upper clad layer 14 is formed on the semi-insulating GaAs substrate 1 At this time, the lattice constants of these layers are made to be equal. Energy gap of forbidden band of the layers 13 and 14 are larger than that of the layer 12 and the layers 13 and 14 are composed of semi-insulating crystal. The layer 12 has usual crystal properties. Next, a P type region 16 and an N type region 17 which become electrodes by implantation of impurity ions from the surface are formed in parallel so far as these enter into the layer 13 and an undoped region of the layer 12 located between these layers is used as a light emission region 18.
公开日期	1985-01-16
申请日期	1983-06-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88214]
专题	半导体激光器专利数据库
作者单位	KOGYO GIJUTSUIN (JAPAN)
推荐引用方式 GB/T 7714	UCHIUMI TAKAO. Planar semiconductor light emitting device. JP1985007789A. 1985-01-16.

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