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	Semiconductor laser device
	SUGINO TAKASHI; YOSHIKAWA AKIO
	1985-11-22
著作权人	松下電器産業株式会社
专利号	JP1985235489A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To produce a semiconductor laser device, in which stable single longitudinal mode oscillation is obtained and a reflecting section between cavities is shaped in the cavities, by partially forming a recessed section onto a substrate and positioning one part of a striped electrode just above or just under a section adjacent to the recessed section. CONSTITUTION:A recessed section 11 is formed to a substrate 10. An SiO2 film 16, a p side ohmic electrode 17 and an n side ohmic electrode 18 are shaped. A striped window for the electrode formed to the SiO2 film 16 is arranged just above a section adjacent to the recessed section 11 in the substrate 10. When beams from a cavity l3 are propagated to a cavity l4, one part of beams distributed to an active layer 13 is reflected by a junction section between both sections l3, l4 because the shape of the active layer or a clad layer 12 changes in both sections. Reflection is also generated similarly in a junction section between l4, l5, oscillation modes are shaped in the cavities of l3, l4, l5, and beams having an oscillation wavelength mutually interfering in each oscillation wavelength are most amplified, and extracted to the outside as oscillation beams.
公开日期	1985-11-22
申请日期	1984-05-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88212]
专题	半导体激光器专利数据库
作者单位	松下電器産業株式会社
推荐引用方式 GB/T 7714	SUGINO TAKASHI,YOSHIKAWA AKIO. Semiconductor laser device. JP1985235489A. 1985-11-22.

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