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	Manufacture of semiconductor laser
	KITAMURA MITSUHIRO
	1985-08-27
著作权人	NIPPON DENKI KK
专利号	JP1985164380A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To preserve diffraction grating after crystal growth in adequately satisfactory conditions and thereby to improve element performance characteristics and production yield by a method wherein crystals are properly grown on the diffraction grating in a semiconductor laser device of the distribution feedback (DFB) or distribution Bragg reflection (DBR) type. CONSTITUTION:On an N-InP substrate 10, an N-InP buffer layer 11, undoped InGaAsP activation layer 12, P-InGaAsP optical guide layer 13, and a P-InP layer 14, which is a second semiconductor layer with high meltback-withstanding capability, are deposited in that order. Here, the first semiconductor layer is the optical guide layer 13. Next, a diffraction grating 2 is formed, penetrating the P-InP layer 14, and a second LPE crystal growth is allowed to be performed for the deposition of a P-InP clad layer 15 to be the third semiconductor layer is deposited, whereby a double heterostructure semiconductor wafer is obtained for a DFB-LD provided with the diffraction grating 2. This results in the retention of the P-InP layer 14 to cap the ridges, meaning the portions with the smallest curvature radius of the diffraction grating 2, which are most susceptible to meltback, minimizing the adverse effect expected to be exerted by meltback.
公开日期	1985-08-27
申请日期	1984-02-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/88191]
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	KITAMURA MITSUHIRO. Manufacture of semiconductor laser. JP1985164380A. 1985-08-27.

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