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	Semiconductor laser and manufacture thereof
	MITO IKUO
	1987-06-23
著作权人	NEC CORP
专利号	JP1987139377A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser and manufacture thereof
英文摘要	PURPOSE:To obtain the element which operates in a stable single mode with high yield by eliminating the need of connecting a negative resistance to an external part by arranging a distribution of resistance corresponding to a distribution of an electric field strength of the light in a direction of a resonator axis. CONSTITUTION:On a diffraction grating 60 formed on a surface of an N-type InP substrate 1, a lambda/4 shift region 50 of the boundary where a cycle of salients and recesses is inverted is formed. Next, on the substrate 1, an N-type InGaAsP light guiding layer 2, an InGaAsP active layer 3, a P-type InP cladding layer 4 and a P-type InP second cladding layer 5 are laminated by liquid-phase epitaxial growth. Then, an SiO2 film 110 is formed by CVD technique and this film 110 is removed into stripe form. Zn is diffused selectively down to the layer 5 to form a low resistance region 100. By using the substrate 1 from which the film 110 is removed, a P-type InGaAsP cap layer 9, an SiO2 insulating film 74, low reflection films 30 and 31, and a mesa stripe 70 are formed and the semiconductor laser element which operates by a stable single mode is fabricated with high yield.
公开日期	1987-06-23
申请日期	1985-12-13
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87971]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	MITO IKUO. Semiconductor laser and manufacture thereof. JP1987139377A. 1987-06-23.

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