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	Multi-beam semiconductor laser element and manufacture thereof
	SATO IESATO
	1987-02-24
著作权人	明星電気株式会社
专利号	JP1987042480A
国家	日本
文献子类	发明申请
其他题名	Multi-beam semiconductor laser element and manufacture thereof
英文摘要	PURPOSE:To make unnecessary the positional adjustments due to the characteristic fluctuation among the elements and the different light source positions for the respective directions by forming a plurality of light emitting elements on the same substrate in the manufacturing process of semiconductor laser elements. CONSTITUTION:A wave guiding path 5 is formed on the counter-electrode side of a substrate 4 having an electrode 11 constructed on one surface thereof, and thereon the layers 61 and 62 of an active layer 6 are formed. The active layer 6 is etched to the substrate 4, forming a trench 10. A clad layer 7 is formed on the surface of the trench 10, and thereon a buffer layer 8 and a gap layer 9 are formed. And thereon an ohmic electrode 12 is formed, and the trench 10 is filled up. The etching is performed to such a depth that the active layer 6 is reached to remove part of the respective semiconductor layers 7, 8, 9 and the electrode 12, and light emitting elements 1, 2, 3 are formed independently of each other using the substrate 4 in common. A ribbon wire 13 is bonded to the electrode 12 of the light emitting elements 1, 2, 3, and casing is appropriately applied for completion.
公开日期	1987-02-24
申请日期	1985-08-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87787]
专题	半导体激光器专利数据库
作者单位	明星電気株式会社
推荐引用方式 GB/T 7714	SATO IESATO. Multi-beam semiconductor laser element and manufacture thereof. JP1987042480A. 1987-02-24.

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