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	Semiconductor device
	YOKOGAWA TOSHIYA; OGURA MOTOTSUGU
	1988-02-05
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1988027803A
国家	日本
文献子类	发明申请
其他题名	Semiconductor device
英文摘要	PURPOSE:To obtain the titled device which is suppressed a bad influence on lattice unconformity by laminating a distorted super lattice layer composed of >=2 kinds of II-VI compd. semiconductor on an insulating film formed on a principal surface of the semiconductor substrate or an insulating film substrate. CONSTITUTION:The titled device is composed of for example, the Si substrate 1, the SiO2 thermal oxidation film 2, the optical wave guide layer composed of ZnS0.5Se0.5 monocrystal thin film 3, the distorted super lattice layer 4, 4' composed of ZnS and ZnS0.5Se0.5, and the clad layer for optical confinement composed of ZnS monocrystal thin film 5. The good epitaxial glowth film is formed by epitaxially growing the II-VI compd. semiconductor on the SiO2 substrate interposing the distorted super lattice layer as a buffer layer between them, thereby mitigating disparity of the crystal structure and the grating constant. And, the SiO2 film is sufficiently useful for the clad layer having a difference of the refractive index. Thus, the generation of defects such as a misfit arrangement, etc., due to the lattice unconformity and the lowering of crystallization are prevented.
公开日期	1988-02-05
申请日期	1986-07-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87765]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	YOKOGAWA TOSHIYA,OGURA MOTOTSUGU. Semiconductor device. JP1988027803A. 1988-02-05.

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