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	Distributed feedback semiconductor laser
	HIRATA SHOJI
	1988-10-19
著作权人	ソニー株式会社
专利号	JP1988252493A
国家	日本
文献子类	发明申请
其他题名	Distributed feedback semiconductor laser
英文摘要	PURPOSE:To realize lambda/4 phase shift without changing an optical guide mechanism by forming a rib-shaped diffraction grating having a discontinuous section along the direction of an optical guide, reducing the thickness of guide layers on both sides of the discontinuous section and shaping stepped sections. CONSTITUTION:A clad layer 2, an active layer 3 and a guide layer 4 are epitaxial-grown onto the main surface of a semiconductor substrate 1 in succession, and a diffraction grating 5 having width W1 and uniform pitches along the direction of an optical guide is shaped on the surface of the guide layer 4. A flat discontinuous section, a phase shift region 12, is formed at the center of the diffraction grating 5 and flat surfaces on both sides of the region 12. Flat sections 14b shaping stepped sections of half the height D of the diffraction grating 5 are formed on both sides of the phase shift region 12. A clad layer 6 and a cap layer 7 are shaped onto the whole surface of such a guide layer 4, and electrodes 9, 10 are formed onto both surfaces.
公开日期	1988-10-19
申请日期	1987-04-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87727]
专题	半导体激光器专利数据库
作者单位	ソニー株式会社
推荐引用方式 GB/T 7714	HIRATA SHOJI. Distributed feedback semiconductor laser. JP1988252493A. 1988-10-19.

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