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	Semiconductor laser diode
	YAMASHITA SOUICHIROU
	1985-01-29
著作权人	NIPPON DENKI KK
专利号	JP1985017977A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser diode
英文摘要	PURPOSE:To obtain a crystal structure of a laser diode element which can increase its output without loss of the substrate properties of the laser diode by concentrating the applied current only at the active stripe. CONSTITUTION:A clad layer 12 and a flat raised guide layer 13 bent by a groove, formed of an N type AlGaAs are arranged on an N type GaAs substrate 11 formed with a groove 91 in the prescribed size at the position for disposing a cavity. Further, an active layer 15 formed of AlGaAs, a clad layer 15 formed of P type AlGaAs, and a cap layer 16 formed of P type GaAs are arranged to expose the surface of a guide layer 13 by forming grooves at the end and both sides of active stripes 92. 2-layer block layers 117, 127 made of P and N type AlGaAs and a cap layer 137 made of P type GaAs are arranged to cover the layers 13-16. When only the active strip 92 of the center is electrically connected, the light emitted from the layer 14 of the strip 92 is propagated through the guide layer, and is guided to the end, i.e., the reflecting surface of the element crystal chip.
公开日期	1985-01-29
申请日期	1983-07-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87686]
专题	半导体激光器专利数据库
作者单位	NIPPON DENKI KK
推荐引用方式 GB/T 7714	YAMASHITA SOUICHIROU. Semiconductor laser diode. JP1985017977A. 1985-01-29.

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