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	Semiconductor laser
	THORNTON, ROBERT L.
	1986-11-20
著作权人	XEROX CORPORATION
专利号	EP0202089A2
国家	欧洲专利局
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	A clad superlattice semiconductor laser is fabricated utilizing impurity-induced disordering (IID) techniques that provides (1) reduction of free carrier absorption in the optical cavity, and (2) the ability selectively to vary the amount of index guiding in the - optical waveguide independent of the properties of the electron-confining multiquantum well structure. The clad superlattice semiconductor laser provides for the inclusion of a superlattice (30) in a cladding layer (20) or region of the laser structure. An effective index waveguide can be realized by selectively disordering the cladding superlattice in regions adjacent to the formed index guide type optical cavity, as long as the superlattice is designed so that the established optical mode significantly overlaps with the disordered superlattice cladding regions, i.e., the evanescent wave propogating in the laser cavity overlaps into regions of the disordered superlattice.
公开日期	1986-11-20
申请日期	1986-05-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87618]
专题	半导体激光器专利数据库
作者单位	XEROX CORPORATION
推荐引用方式 GB/T 7714	THORNTON, ROBERT L.. Semiconductor laser. EP0202089A2. 1986-11-20.

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