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	Semiconductor laser device
	HARADA YASOO
	1983-03-23
著作权人	SANYO DENKI KK
专利号	JP1983048982A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To improve the efficiency of the radiation of heat remarkably by forming a plurality of grooves running parallel with an insulating GaAs substrate, coating sections on the grooves with a SiO2 film and generating air gaps to the groove sections when a layer for shaping an element region is laminated and grown in epitaxial from when the semiconductor laser device is manufactured. CONSTITUTION:The insulating GaAs substrate 1 is etched selectively by using an etching liquid in which the ratio of sulfuric acid, hydrogen peroxide and water is made 3:1:1, and a plurality of the mutually parallel grooves 2 are formed to the surface of the substrate The SiO2 insulating films 3 extending to wall surfaces from the bottoms of the grooves 2 and further to the edge sections of the grooves 2 are coated, an undoped GaAs layer is grown onto the whole surface, and the first protective layer 4, which does not exist on the SiO2 insulating film 3 due to the presence of the films 3, is obtained. The first clad layer 5, an active layer 6, the second clad layer 7 and the second protective layer 8 are laminated onto the whole surface and grown in epitaxial shape, a P type region 10 and a P type region 9 positioned onto the region 10 are formed through diffusion extending over the two grooves 2, and the central section of the two grooves 2 to which the regions 10, 9 are not shaped is cut.
公开日期	1983-03-23
申请日期	1981-09-18
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87506]
专题	半导体激光器专利数据库
作者单位	SANYO DENKI KK
推荐引用方式 GB/T 7714	HARADA YASOO. Semiconductor laser device. JP1983048982A. 1983-03-23.

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