| 結晶成長方法 | |
| 大川 和宏; 三露 常男; 山崎 攻 | |
| 1995-03-06 | |
| 著作权人 | 松下電器産業株式会社 |
| 专利号 | JP1995019783B2 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 結晶成長方法 |
| 英文摘要 | PURPOSE:To increase carrier density, and to lower resistivity by irradiating zinc selenide or zinc sulfide-selenide by beams of particles containing zinc chloride or hydrogen chloride or chlorine gas through a molecular-beam epitaxy. CONSTITUTION:The upper section of a substratel is irradiated by selenium 5 and sulfur and zinc 4 as molecular beams by using a molecular beam epitaxy, thus growing a zinc selenide crystal 3 or a zinc sulfide-selenide crystal. The upper section of the substrate 1 is irradiated simultaneously by the molecular beams of zinc chloride 6 or hydrogen chloride or chlorine gas, thus adding chlorine to the zinc selenide crystal 3 or the zinc sulfide-selenide crystal as an impurity. Accordingly, carrier density is increased, and resistivity is lowered. |
| 公开日期 | 1995-03-06 |
| 申请日期 | 1986-05-20 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/87411]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 松下電器産業株式会社 |
| 推荐引用方式 GB/T 7714 | 大川 和宏,三露 常男,山崎 攻. 結晶成長方法. JP1995019783B2. 1995-03-06. |
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