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	Semiconductor laser
	KOMATSU HIROSHI
	1988-05-20
著作权人	SEIKO EPSON CORP
专利号	JP1988116483A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To improve on a semiconductor laser device in its heat-radiating feature by a method wherein a multiple quantum well structure, wherein difference in energy between base miniature bands formed in a conduction layer and in a valence layer is larger than the activation layer energy gap, is constructed in a part of a clad layer. CONSTITUTION:On an N-type GaAs substrate 101, an N-type GaAs buffer layer 102 is formed. A process follows wherein an N-type clad layer 105 is formed wherein Al0.5In0.5P barrier layers 103 and Ga0.5In0.5P well layers 104 are alternately stacked up, a Ga0.5In0.5P activation layer 106 is formed, a P-type clad layer 109 wherein Al0.5In0.5P barrier layers 107 and p-type Ga0.5In0.5P well layers 108 are stacked up, a P-type GaAs cap layer 110 is formed and, finally, an N-type GaAs block layer 111 is formed. In this way, a low-resistance structure may be produced because a high carrier concentration is obtained by doping a shallow impurity level well layer that is free of a deep electron trap known as a DX center.
公开日期	1988-05-20
申请日期	1986-11-04
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87375]
专题	半导体激光器专利数据库
作者单位	SEIKO EPSON CORP
推荐引用方式 GB/T 7714	KOMATSU HIROSHI. Semiconductor laser. JP1988116483A. 1988-05-20.

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