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	Distributed feedback type semiconductor laser
	YAMAGUCHI MASAYUKI
	1990-03-30
著作权人	NEC CORP
专利号	JP1990090688A
国家	日本
文献子类	发明申请
其他题名	Distributed feedback type semiconductor laser
英文摘要	PURPOSE:To obtain a semiconductor laser which is excellent in a low threshold operation and a high temperature operation, high in yield, and capable of oscillating in a single wavelength by a method wherein the wavelength composition of a guide layer and the shape (height and shape of crest) of the periodic irregularities of a diffraction grating are so determined as to enable a coupling coefficient which indicates the coupling strength between a periodic structure and light to be a specified value. CONSTITUTION:A primary diffraction grating 3 provided with a phase shift region 2 is formed on an n-InP substrate 1, and then an n-InGaAsP guide layer 4, a non doped InGaAs active layer 5, a p-InP clad layer 6, and a P-InGaAsP cap layer 7 are grown in crystal respectively. Electrodes 8 and 9 are provided onto the cap layer 7 and under the substrate 1 respectively, anti-reflective coatings 10 and 11 are provided to both the end faces perpendicular to the active layer 5. The height of the crest of the diffraction grating 3 is 400Angstrom and a resonator length is 300mum. Here, a coupling coefficient (KL) can be regulated through the wavelength composition of the guide layer 4 and the height of the crest of the diffraction grating 3. KL needs to be within the range of 5-2.5 so as to obtain a semiconductor laser which is operable at a low threshold, high in yield, and capable of oscillating in a single wavelength.
公开日期	1990-03-30
申请日期	1988-09-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87358]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	YAMAGUCHI MASAYUKI. Distributed feedback type semiconductor laser. JP1990090688A. 1990-03-30.

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