Manufacture of surface light-emitting semiconductor element
KASUKAWA AKIHIKO; IMASHIYOU YOSHIHIRO
1992-02-24
著作权人HIKARI GIJIYUTSU KENKIYUU KAIHATSU KK
专利号JP1992056182A
国家日本
文献子类发明申请
其他题名Manufacture of surface light-emitting semiconductor element
英文摘要PURPOSE:To enable a title item to be formed in nearly circular form and its surface to be formed flat and characteristics of each element to be uniform when forming a plurality of surface light-emitting semiconductor laser elements by using a specific mixed etching liquid as a solution for etching a layer which is subjected to epitaxial growth in a circular mesa shape. CONSTITUTION:An etching mask 7 according to a circular SiO2 whose diameter is 10mum is formed on a clad layer 6. Then, etching is provided using a mixed etching liquid which is obtained by mixing hydrochloric acid, acetic acid, and hydrogen peroxide water in a ratio of 1:2:1 (volume ratio) from a main surface of the layer 6 where no mask 7 is provided to a depth reaching a specified position of an activation layer 5. Then, selective etching is provided using an etching liquid obtained by mixing sulfuric acid, water, and hydrogen peroxide water in a ratio of 3:1:1 (volume ratio) from a specified position of a layer 5 to a clad layer 4, thus forming a circular mesa whose diameter is 10mum, thus forming a nearly circular element and a flat surface and enabling characteristics of each element to be uniform when forming a plurality of face light-emitting semiconductor laser elements.
公开日期1992-02-24
申请日期1990-06-21
状态失效
内容类型专利
源URL[http://ir.opt.ac.cn/handle/181661/87253]  
专题半导体激光器专利数据库
作者单位HIKARI GIJIYUTSU KENKIYUU KAIHATSU KK
推荐引用方式
GB/T 7714
KASUKAWA AKIHIKO,IMASHIYOU YOSHIHIRO. Manufacture of surface light-emitting semiconductor element. JP1992056182A. 1992-02-24.
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