Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates

	Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates
	Dong, Lin ; Sun, Guosheng ; Yu, Jun ; Zheng, Liu ; Liu, Xingfang ; Zhang, Feng ; Yan, Guoguo ; Li, Xiguang ; Wang, Zhanguo
刊名	applied surface science
	2013
卷号	270 页码:301-306
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24336]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Dong, Lin,Sun, Guosheng,Yu, Jun,et al. Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates[J]. applied surface science,2013,270:301-306.
APA	Dong, Lin.,Sun, Guosheng.,Yu, Jun.,Zheng, Liu.,Liu, Xingfang.,...&Wang, Zhanguo.(2013).Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates.applied surface science,270,301-306.
MLA	Dong, Lin,et al."Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates".applied surface science 270(2013):301-306.