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	Semiconductor laser device
	KADOWAKI TOMOKO; IKUWA YOSHITO
	1992-02-13
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1992042591A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To efficiently radiate the heat produce din a semiconductor laser chip so as to lower the thermal resistance of an element by constituting the element of the semiconductor laser chip, a sub-mount, and a mount and forming an Si and Au films on the surface of the sub-mount. CONSTITUTION:A semiconductor laser chip 1 is put on an Ag block 4 with an SiC sub-mount 2 in between and heated to the Au-Si eutectic temperature of >= 363 deg.C with a heater 5. then the surfaces of an Si and Au films 20 and 21 coating the sub-mount 2 and the metallic electrode 10 of the chip 1 melt and mix together to AuSi solder 22 where the chip 1 is in contact with the sub-mount 2. where the sub-mount is in contact with the block 4, the surfaces of the Si and Au film s 20 and 21 applied on the sub-mount 2 and an au film 40 applied on the block 4 are fused and mixed together and the mixture acts as AuSi solder 22. therefore, the heat produced in the laser chip at the time of operating the laser can be radiated efficiently to the Ag block side.
公开日期	1992-02-13
申请日期	1990-06-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/87084]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	KADOWAKI TOMOKO,IKUWA YOSHITO. Semiconductor laser device. JP1992042591A. 1992-02-13.

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