| Optical semiconductor equipment | |
| NAKAHARA, KOUJI; TSUCHIYA, TOMONOBU; TAIKE, AKIRA; SHINODA, KAZUNORI | |
| 2004-05-27 | |
| 著作权人 | LUMENTUM JAPAN, INC. |
| 专利号 | US20040099859A1 |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Optical semiconductor equipment |
| 英文摘要 | The prior art distributed feedback laser having an InGaAlAs active layer involves a problem that its laser characteristics are deteriorated at high temperature due to the high device resistance. According to the present invention, a ridge type laser is fabricated by: forming an InGaAlAs-MQW layer 104 on a n-type InP substrate 101; growing a p-type InGaAlAs-GRIN-SCH layer 105, a p-type InAlAs electron stopping layer 106 and a p-type grating layer 107 in this order on the InGaAlAs-MQW layer 104; forming a grating; and regrowing a p-type InP cladding layer 108 and a p-type InGaAs contact layer in this order. The concave depth of the grating is smaller than the thickness of the p-type grating layer 107. |
| 公开日期 | 2004-05-27 |
| 申请日期 | 2003-06-27 |
| 状态 | 授权 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/86906]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | LUMENTUM JAPAN, INC. |
| 推荐引用方式 GB/T 7714 | NAKAHARA, KOUJI,TSUCHIYA, TOMONOBU,TAIKE, AKIRA,et al. Optical semiconductor equipment. US20040099859A1. 2004-05-27. |
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