| Semiconductor laser device | |
| UMEDA, JUN-ICHI; NAKASHIMA, HISAO; KAJIMURA, TAKASHI; KURODA, TAKAO | |
| 1982-11-10 | |
| 著作权人 | HITACHI, LTD. |
| 专利号 | EP0064339A1 |
| 国家 | 欧洲专利局 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device has an active layer (3) between cladding layers (2; 4, 6). To phase-lock the laser emissions and thus give high power laser output which can be condensed and collimated, one of the cladding layers (4, 6) is provided with strip-like optical absorption regions (5) arranged in a direction intersecting the direction of travel of , the laser light. This causes a variation of a complex refractive index for the laser beam, and local emissions of adjacent lasers give rise to a non-linear interaction therebetween. |
| 公开日期 | 1982-11-10 |
| 申请日期 | 1982-04-14 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/85298]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI, LTD. |
| 推荐引用方式 GB/T 7714 | UMEDA, JUN-ICHI,NAKASHIMA, HISAO,KAJIMURA, TAKASHI,et al. Semiconductor laser device. EP0064339A1. 1982-11-10. |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论