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	Semiconductor laser element
	YAMASHITA SHIGEO; KASHIWADA YASUTOSHI; OOUCHI HIROBUMI
	1983-11-15
著作权人	HITACHI SEISAKUSHO KK
专利号	JP1983196083A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser element
英文摘要	PURPOSE:To reduce the value of oscillation threshold current and thus obtain a high reliability by a method wherein the element is formed in a structure of internal current stricture regardless of the conductivity type of substrate crystal. CONSTITUTION:A P-GaAs layer 2 and an N-GaAs layer 3 are formed on an N- GaAs substrate 1 by a liquid phase growing method. Next, a groove 4 is provided in a stripe shape by a photo lithography process, and a P-Ga1-xAlxAs clad layer 5, an undoped Ga1-yAlyAs active layer 6, an N-Ga1-xAlxAs clad layer 7, and an N-GaAs cap layer 8 are grown thereon. Then, using the mask of Al2O3- SiO2, Zn is selectively diffused at a part until it reaches the P-GaAs layer 2. The clearance between an active region and a Zn diffused region 9 is etched to the layer 3, and protected with an SiO2 film 1 Finally, Ti-Pa-Au is evaporated as a surface P-side electrode 12, and AuGeNi-Pd-Au as an N-side electrode 13.
公开日期	1983-11-15
申请日期	1982-05-12
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/85290]
专题	半导体激光器专利数据库
作者单位	HITACHI SEISAKUSHO KK
推荐引用方式 GB/T 7714	YAMASHITA SHIGEO,KASHIWADA YASUTOSHI,OOUCHI HIROBUMI. Semiconductor laser element. JP1983196083A. 1983-11-15.

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