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	Semiconductor laser device and manufacture thereof
	TAKAHASHI YASUHITO; OGURA MOTOTSUGU; YOKOGAWA TOSHIYA
	1989-12-18
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1989312883A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device and manufacture thereof
英文摘要	PURPOSE:To allow a semiconductor layer to be easily equipped with an ohmic contact resistance and its contact resistance becomes low in such a manner that it can be disregarded and thus this device makes injection carriers as well as the confinement of light satisfactory by embedding side faces of an active layer with a binary or more compound semiconductor layer and then, providing a binary or more compound semiconductor layer on the above embedded layer through an oxide or nitride thin film layer. CONSTITUTION:A double hetero structure possesses the thin film of a binary or more compound semiconductor layer as an active layer 6 and ternary or more compound semiconductor layers having energy gaps which are larger than that of the active layer as clad layers 5 and 7. Side faces of the above hetero structure are embedded with a binary or more compound semiconductor layer 4 having not only an energy gap which is larger than those of the active layer 6 as well as the clad layers 5 and 7 by more than 0.3eV but also a small refractive index and then, a binary or more compound semiconductor layer 2 is formed on the above embedded layer through an oxide 3 or nitride thin film layer. As a cap layer 2 spreads not only on a mesa part but also over the whole face of the above compound semiconductor layer, this device allows the semiconductor device to be easily equipped with an ohmic contact resistance and its contact resistance becomes low in such a manner that it is disregarded. This approach thus makes injection carriers and the confinement of light satisfactory.
公开日期	1989-12-18
申请日期	1988-06-10
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/85215]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	TAKAHASHI YASUHITO,OGURA MOTOTSUGU,YOKOGAWA TOSHIYA. Semiconductor laser device and manufacture thereof. JP1989312883A. 1989-12-18.

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