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	Semiconductor laser
	IRIKAWA MASANORI; KASHIWA SUSUMU
	1988-09-09
著作权人	FURUKAWA ELECTRIC CO LTD:THE
专利号	JP1988217690A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To improve the reliability and yield of an element by displaying a current constriction function by first and second ion implanting layers while realizing index waveguide structure by an active layer and the second ion implanting layer. CONSTITUTION:A p-n junction constituted of a second ion implanting layer 28 formed into an n cap layer 27 is brought to reverse bias conditions when an element is operated, and currents are caused to flow through only a channel section 24. A p-n junction organized of a p-clad layer 21 and a first ion implanting layer 25 shaped into said layer 21 is brought to forward bias conditions on operation, but only the p-n junction of the channel section is brought to an ON state because the ON voltage of the p-n junction is made higher than that of the heterojunction of the channel section 24. That is, a current constriction function can be displayed by the ion implanting layers 25, 28. The channel section 24 has a refractive index larger than a peripheral section and index waveguide structure as a distributed index in the transverse direction in an active layer 22. Accordingly, the reliability and yield of the element are improved.
公开日期	1988-09-09
申请日期	1987-03-05
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/85194]
专题	半导体激光器专利数据库
作者单位	FURUKAWA ELECTRIC CO LTD:THE
推荐引用方式 GB/T 7714	IRIKAWA MASANORI,KASHIWA SUSUMU. Semiconductor laser. JP1988217690A. 1988-09-09.

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