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	Manufacture of semiconductor laser device
	TAMURA HIDEO; SAGARA MINORU; IIDA SEIJI; KURIHARA HARUKI
	1983-11-08
著作权人	TOKYO SHIBAURA DENKI KK
专利号	JP1983191485A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser device
英文摘要	PURPOSE:To improve the yield rate of production for the EH laser of the titled semiconductor laser device by a method wherein the substrate surface on which crystal is grown is protruded from the stopping mask of liquid-phase crystal growth, and a number of stripe-formed windows having equal width are provided piriodically on the whole surface of the substrate. CONSTITUTION:The stripe-formed windows of s=3mum in width are formed on the whole surface of an n-GaAs substrate 20 at an interval of u=10mum. An n- Ga0.55Al0.45As clad layer 25, an n-Ga0.87Al0.13As active layer 26, a P-Ga0.55Al0.45 As clad layer 27 and a p-GaAs ohmic layer 28 are successively grown on said substrate. Then, SiO2 29 of 1500Angstrom is deposited on the substrate, and a main stripe window is formed by removing the SiO2 located at the upper part of an optional crystal grown part 30 in stripe form (width approx.=2mum) using a fluoric acid etchant. The laser chip shown in the diagram is formed by vapor-depositing an electrode metal (n-side: Av-Gu/Au, P-side: Cv/Au) on the processed wafer, and cut out after it has been alloyed. Through these procedures, the difficulties encountered in the technique used heretofore in crystal growth on the main stripe window are not observed at all now.
公开日期	1983-11-08
申请日期	1982-05-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/85108]
专题	半导体激光器专利数据库
作者单位	TOKYO SHIBAURA DENKI KK
推荐引用方式 GB/T 7714	TAMURA HIDEO,SAGARA MINORU,IIDA SEIJI,et al. Manufacture of semiconductor laser device. JP1983191485A. 1983-11-08.

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