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	Light-emitting diode with a narrow beam divergence based on the effect of photonic band crystal-mediated filtration of high-order optical modes
	LEDENTSOV, NIKOLAI; SHCHUKIN, VITALY
	2007-04-26
著作权人	P.B.C. LASERS, LTD
专利号	US20070091953A1
国家	美国
文献子类	发明申请
其他题名	Light-emitting diode with a narrow beam divergence based on the effect of photonic band crystal-mediated filtration of high-order optical modes
英文摘要	A semiconductor light-emitting diode having a low beam divergence includes at least one waveguide comprising an active region generating light by injection of a current, a photonic band crystal having the refractive index modulation in the direction perpendicular to the propagation of the emitted light, and at least one optical defect. The photonic band crystal and the optical defect are optimized such that the fundamental optical mode of the device is localized at the defect and decays away from the defect, while the other optical modes are extended over the photonic band crystal. The optical confinement factor of the localized optical mode preferably exceeds the optical confinement factor of the rest of the optical modes by at least a factor of three.
公开日期	2007-04-26
申请日期	2006-10-13
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84986]
专题	半导体激光器专利数据库
作者单位	P.B.C. LASERS, LTD
推荐引用方式 GB/T 7714	LEDENTSOV, NIKOLAI,SHCHUKIN, VITALY. Light-emitting diode with a narrow beam divergence based on the effect of photonic band crystal-mediated filtration of high-order optical modes. US20070091953A1. 2007-04-26.

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