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	Semiconductor laser
	NOMURA YOSHITOKU; OGATA HITOSHI
	1990-10-03
著作权人	HIKARI GIJUTSU KENKYU KAIHATSU KK
专利号	JP1990248095A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To improve a semiconductor laser of this design in external quantum efficiency and differential gain by a method wherein the energy band levels of an active layers, a P-side clad layer, and an N-side clad layer on a valence band are made to become higher than that of the following layer respectively in this sequence, and the conduction band lower end levels of the P-side clad layer, the N-side clad layer, and the active layer are made to become higher than that of the following layer respectively in this sequence. CONSTITUTION:When a forward bias voltage is applied to electrodes 1 and 2, electrons and holes are injected into a multiquantum well layer 3 through diffusion and recombined with radiation. The radiation concerned is conducive to laser oscillation. Even if carriers are injected high in concentration, the potential level of a P-side clad layer 4 is higher than the energy level of the injected electrons and the potential level of an N-side clad layer 5 is higher than the energy level of the injected holes, so that electrons and holes are prevented from entering each other's clad layer. Therefore, the recombination of carriers and a noneffective current do not occur in the layer 4 or the layer 5, in result a laser of this design can be improved in external quantum efficiency and differential gain.
公开日期	1990-10-03
申请日期	1989-03-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84568]
专题	半导体激光器专利数据库
作者单位	HIKARI GIJUTSU KENKYU KAIHATSU KK
推荐引用方式 GB/T 7714	NOMURA YOSHITOKU,OGATA HITOSHI. Semiconductor laser. JP1990248095A. 1990-10-03.

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