QQ客服 官方微博 反馈留言

	半導体レーザ素子
	石川 信
	1998-02-20
著作权人	日本電気株式会社
专利号	JP2748570B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザ素子
英文摘要	PURPOSE:To improve temperature characteristic with a low threshold value by forming a SCH guide layer of a SCH structure of a superlattice in which AlxGa1-xAs and AlyGa1-y0.5In0.5P having a band cap equivalent to that of the AlxGa1-xAs are alternately laminated. CONSTITUTION:A semiconductor laser element is formed of a n-type Al0.75Ga0.25 As clad layer 1, a Ga0.5In0.5P/Al0.4Ga0.6As superlattice guide layer 2, a GaAs active layer 3, and a p-type Al0.75Ga0.25As Clad layer 4. An energy barrier is formed at the valance band, conductor of a superlattice guide layer, and electrons and holes locally exist in a potential well. Since the energy gap of a substance for forming a superlattice is the same, the wells are alternately formed in a layer growing direction, and the electrons and the holes are separated. As a result, transition probability of recombining the electron-hole pairs is reduced, and the life times of minority carriers are increased as compared with a bulk. Accordingly, reactive current to be recombined in a guide layer and consumed is reduced, and temperature characteristic is improved with a low threshold value.
公开日期	1998-05-06
申请日期	1989-06-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84426]
专题	半导体激光器专利数据库
作者单位	日本電気株式会社
推荐引用方式 GB/T 7714	石川 信. 半導体レーザ素子. JP2748570B2. 1998-02-20.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。