| Semiconductor laser device | |
| IKEDA SOTOMITSU | |
| 1989-11-14 | |
| 著作权人 | CANON INC |
| 专利号 | JP1989282883A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To suppress the side mode instability due to a lowered refraction factor on account of increased carriers by making the distribution of the carrier density at the time of oscillation in an active layer into a broad twin-peak shape in a refraction factor waveguide type laser. CONSTITUTION:An AlGaAs compound semiconductor is epitaxially grown on an n-GaAs substrate 9, a p-GaAs active layer 6 is placed between an n-Al0.4Ga0.8As clad layer 7 and a p-Al0.4Ga0.8As clad layer 5, while an n-GaAs buffer layer 8 is formed between the substrate and an n-type clad layer 7. After filming a p-type clad layer 5, a ridge is processed, later regrow is performed, a p-GaAs cap layer 4 is filed so as to take ohmic contact with a p-side electrode. The current injection windows (a) and (b) are formed on both sides of the ridge bottom part, while an insulating film 3 such as Si3N4 and SiO2 is filmed outside the current injection windows of the ridge part and the ridge bottom part. |
| 公开日期 | 1989-11-14 |
| 申请日期 | 1988-05-10 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84201]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | CANON INC |
| 推荐引用方式 GB/T 7714 | IKEDA SOTOMITSU. Semiconductor laser device. JP1989282883A. 1989-11-14. |
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