| Semiconductor laser element | |
| KUSHIBE MITSUHIRO; FUNAMIZU MASAHISA | |
| 1989-08-31 | |
| 著作权人 | TOSHIBA CORP |
| 专利号 | JP1989217985A |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser element which can be produced with good reproducibility and is adapted such that oscillation waveform can be controlled easily, by using an InGaAs layer doped with a dopant as an active layer. CONSTITUTION:An Ntype InP clad layer 2 doped with selenium is formed on an N-type (100) InP substrate Then, an InGaAs clad layer 2 doped with selenium is formed thereon. Then, a P-type InP clad layer 4 doped with zinc is formed. Then, a P-type InGaAsP contact layer 5 doped with zinc is formed. The P-type InGaAsP contact layer 5 is etched off by 0.2mum and electrodes 6, 7 are provided. |
| 公开日期 | 1989-08-31 |
| 申请日期 | 1988-02-26 |
| 状态 | 失效 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/84185]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA CORP |
| 推荐引用方式 GB/T 7714 | KUSHIBE MITSUHIRO,FUNAMIZU MASAHISA. Semiconductor laser element. JP1989217985A. 1989-08-31. |
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