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	Semiconductor laser and manufacture thereof
	ONAKA SEIJI; OGURA MOTOTSUGU
	1991-01-28
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1991019293A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser and manufacture thereof
英文摘要	PURPOSE:To confine a light in a direction parallel to an active layer and to guide the light by forming AlGaInP or AlInP layers having smaller refractive index than that of an AlGaInP clad layer at both sides of a stripe. CONSTITUTION:An n-type AlGaInP clad layer 102, a GaInP active layer 103, a P-type AlGaInP clad layer 104, and a P-type GaInP buffer layer 105 are grown on an n-type GaAs substrate 10 Then, with an SiO2 film 106 as a mask the layers 105, 104 are etched to form the layer 104 in an inverted mesa shape. Then, with the layer 106 as a mask a P-type AlInP layer 107 and a GaAs layer 108 having lower refractive index than that of the layer 104 are crystalline- grown. Thereafter, an SiO2 film 109 is formed in a stripe state on the layer 108, with the film 109 as a mask the layers 108, 107 are etched to form the layer 107 in an inverted mesa state. Then, with the film 109 as a mask an n-type GaAs current block layer 110 is formed. Thus, a light is confined in a direction parallel to the layer 103 to be guided, and its heat dissipation is improved.
公开日期	1991-01-28
申请日期	1989-06-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84150]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	ONAKA SEIJI,OGURA MOTOTSUGU. Semiconductor laser and manufacture thereof. JP1991019293A. 1991-01-28.

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