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	Semiconductor laser and manufacture thereof
	MANNOU MASAYA; OGURA MOTOTSUGU
	1991-02-14
著作权人	MATSUSHITA ELECTRIC IND CO LTD
专利号	JP1991034595A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser and manufacture thereof
英文摘要	PURPOSE:To perform high output with a single transverse mode and stable operations for a long time by allowing a semiconductor laser to be equipped with a buried layer covering side faces of an active layer and a photoabsorption layer which absorbs light leaking out from the neighbourhood of both ends of the active layer in the semiconductor laser having double heterostructure which makes (AlxGa1-x) InP act as the active layer and furthermore, (AlyGa1-y) InP act as a clad layer on a GaAs substrate, thereby making the buried layer have a prescribed composition. CONSTITUTION:An n-type AlGaInP clad layer 2, a GaInP active layer 3, a p-type AlGaInP clad layer 4, and a p-type GaAs cap layer 5 are formed in order on an n-type GaAs substrate Double heterostructure is made up to have a forward mesa like ridge having the width of 6mum and a thin high resistive AlGaAs buried layer 6 and a high resistive GaAs photoabsorption layer 7 are formed at the side faces of the ridge. As the side faces of the GaInP active layer 3 have forbidden band widths broader than those of GaInP and are covered with the AlGaAs buried layer 6 that has a low refractive index but has a high resistance, electric current together with light are confined in the GaInP active layer 3. However, as the ridge is formed into the forward mesa like shape, the neighborhood of both ends of the active layer 3 has a thin p-type AlGaInP clad layer 4 and then, lower slopes of light distribution are placed on the high resistive GaAs photo-absorption layer 7. Its photoabsorption, therefore, enables a higher order transverse mode to perform suppressed single transverse mode oscillations, even though its ridge width becomes wider.
公开日期	1991-02-14
申请日期	1989-06-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84130]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC IND CO LTD
推荐引用方式 GB/T 7714	MANNOU MASAYA,OGURA MOTOTSUGU. Semiconductor laser and manufacture thereof. JP1991034595A. 1991-02-14.

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