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	Semiconductor laser
	HIRATANI YUJI; KASHIWA TORU
	1989-12-21
著作权人	光技術研究開発株式会社
专利号	JP1989316986A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To make a semiconductor protrusion serve as an optical waveguide layer, to decrease a threshold current density, and to facilitate a highly efficient coupling of a semiconductor laser with an optical transmission body by a method wherein a semiconductor protrusion, a hetero-structure, a resonating mirror and others are provided onto a substrate. CONSTITUTION:A high reflecting film 12 formed of a semiconductor multilayer film is formed on a substrate of an InP crystal. A resonating mirror 21 taking advantage of a high reflecting film 12 and a resonating mirror 22 taking advantage of a high reflecting film 18 formed of a dielectric multilayer film are formed on the film 12. A refractive index of a semiconductor protrusion 13 is higher than those of clad layers 14, 16, and 17 and a band gap of the protrusion 13 is wider than that of an active layer 15. By these processes, a threshold current density is decreased and the highly efficient coupling between the laser and an optical transmission body can facilitated.
公开日期	1989-12-21
申请日期	1988-06-17
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/84013]
专题	半导体激光器专利数据库
作者单位	光技術研究開発株式会社
推荐引用方式 GB/T 7714	HIRATANI YUJI,KASHIWA TORU. Semiconductor laser. JP1989316986A. 1989-12-21.

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