Semiconductor light emitting device | |
ISHIKAWA HIROSHI; SUDOU HISAO | |
1984-01-10 | |
著作权人 | FUJITSU KK |
专利号 | JP1984004190A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Semiconductor light emitting device |
英文摘要 | PURPOSE:To unify an oscillation axis mode of a semiconductor light emitting device and to reduce the threshold value of the device by providing a groove having periodic irregularity on the side face formed on a semiconductor substrate, a clad layer and an active layer formed in the groove, thereby readily adding DFB, DBR structures. CONSTITUTION:A p type InP semiconductor layer 2 is formed by epitaxial growing method or a gas phase diffusing method on an n type InP semiconductor substrate 1, and then a dioxidized silicon film 3 is formed. The film 3 is then patterned, thereby forming a striped hole 3A. A photoresit film is formed on the overall surface, and pattern exposed by the interference of laser light, thereby forming a periodic fine strip pattern 4. With the pattern 4 as a mask the film 3 is etched, and the pattern 4 used as a mask is removed. With the film 3 as a mask the layer 2 and the substrate 1 are etched to form grooves 5. Then, an n type InP semiconductor layer 6, an InGaAsP active layer 7, a p type InP semiconductor layer 8, and a p type InGaAsP semiconductor layer 9 are sequentially grown, and an irregularity is periodically formed longitudinally on the side face of the layer 7. |
公开日期 | 1984-01-10 |
申请日期 | 1982-06-30 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/83979] |
专题 | 半导体激光器专利数据库 |
作者单位 | FUJITSU KK |
推荐引用方式 GB/T 7714 | ISHIKAWA HIROSHI,SUDOU HISAO. Semiconductor light emitting device. JP1984004190A. 1984-01-10. |
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