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	HIGUCHI HIDEYO; NAMISAKI HIROBUMI; OOMURA ETSUJI; IKEDA KENJI; SAKAKIBARA YASUSHI
	1993-02-08
著作权人	MITSUBISHI ELECTRIC CORP
专利号	JP1993009951B2
国家	日本
文献子类	授权发明
其他题名	-
英文摘要	PURPOSE:To make parasitic capacity small, by removing the specified part of a reverse-bias P-N junction other than an active region until the main surface of a substrate is reached by etching and the like, forming a mesa part, and providing a dielectric insulating film on the mesa part. CONSTITUTION:On a substrate 101, an N-InP layer 102, an active region 103 and a P-InP layer 104 are sequentially formed by using a liquid-phase growing method and the like. Thereafter a mesa is formed by using an ordinary photolithgraphy method, a chemical etching method and the like. Then current narrowing parts 105 and 106 comprising reverse-bias P-N junction parts are formed so as to bury the mesa part. Thereafter the narrowing layers other than the surrounding areas of the active parts 102-104 are removed by an etching method and the like. The entire device is coated by a dielectric insulating film 2. A window is formed on the mesa part, and an electrode 107 is formed in this window. Since the area of the current narrowing parts become small in comparison with the conventional device, the parasitic capacity at this part can be reduced.
公开日期	1993-02-08
申请日期	1984-02-13
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83687]
专题	半导体激光器专利数据库
作者单位	MITSUBISHI ELECTRIC CORP
推荐引用方式 GB/T 7714	HIGUCHI HIDEYO,NAMISAKI HIROBUMI,OOMURA ETSUJI,et al. -. JP1993009951B2. 1993-02-08.

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