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	半導体レーザ装置
	宮沢 誠一
	1996-03-29
著作权人	キヤノン株式会社
专利号	JP1996034330B2
国家	日本
文献子类	授权发明
其他题名	半導体レーザ装置
英文摘要	PURPOSE:To obtain an excellent current narrowing effect and a light confinement effect by a method wherein a substrate having a groove or a protrusion whose cross section is a trapezoidal shape is used as a substrate and a semiconductor layer contacting an amphoteric impurity is used. CONSTITUTION:The following are laminated one after another on a p-GaAs substrate 51 where a groove has been formed on a (011) plane: an Si-doped GaAs buffer layer 52; a Be-doped AlGaAs lower-part clad layer 53; an active layer 54 as a multilayer quantum well where five undoped AlGaAs layers as well layers and four undoped AlGaAs layers as barrier layers have been laminated alternately; an Si-doped AlGaAs upper-part clad layer 55; an Sn-doped GaAs contact layer 56; then, an n-type electrode 57 and a p-type electrode 58 are formed on the both sides. When Si-doped GaAs is made to grow on the groove in the substrate 51, only a part 60 formed on slopes becomes a p-type; a part formed on the (011) plane changes to an n-type. When a forward bias current is applied to the electrodes 57, 58, the electric current flows as shown by the arrows 59; a carrier is concentrated in the layer 54 in the groove.
公开日期	1996-03-29
申请日期	1988-03-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83662]
专题	半导体激光器专利数据库
作者单位	キヤノン株式会社
推荐引用方式 GB/T 7714	宮沢 誠一. 半導体レーザ装置. JP1996034330B2. 1996-03-29.

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