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	SASA MASAHIKO; KONDO KAZUHIRO; MUTO SHUNICHI
	1991-03-13
著作权人	FUJITSU LTD
专利号	JP1991018733B2
国家	日本
文献子类	授权发明
其他题名	-
英文摘要	PURPOSE:To bring the density of carrier electrons to 109cm or thereabout and to enable to increase a current and to reduce a resistance value and the like by a method wherein silicon is atomic plane-doped on a gallium arsenide or aluminum-gallium semiconductor layer under the specific condition. CONSTITUTION:Si is doped on a GaAs or AlGaAs semiconductor layer by performing an atomic plane-doping method. To be more precise, while the MBE of a GaAs or AlGaAs semiconductor is being grown, the growth of the GaAs or AlGaAs semiconductor layer is discontinued by stopping the irradiation with the beam of Ga or Al and Ga, an Si beam is made to incident and Si atoms are coated on the semiconductor layer. Then, the irradiation of Si beam is stopped, and a GaAs or AlGaAs semiconductor layer is grown, and said growing method is repeated at a plurality of times.
公开日期	1991-03-13
申请日期	1985-02-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83640]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	SASA MASAHIKO,KONDO KAZUHIRO,MUTO SHUNICHI. -. JP1991018733B2. 1991-03-13.

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