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	Semiconductor light emitting device
	TANAKA, AKIRA; HONGO, CHIE; HARADA, YOSHIYUKI; SUGAWARA, HIDETO; ONOMURA, MASAAKI; KATSUNO, HIROSHI
	2007-04-19
著作权人	KABUSHIKI KAISHA TOSHIBA
专利号	US20070086496A1
国家	美国
文献子类	发明申请
其他题名	Semiconductor light emitting device
英文摘要	A semiconductor light emitting device comprises: a first cladding layer made of nitride semiconductor of a first conductivity type; an active layer provided on the first cladding layer, the active layer including a first barrier layer made of nitride semiconductor, a second barrier layer made of nitride semiconductor, and a well layer made of nitride semiconductor, the well layer being provided between the first barrier layer and the second barrier layer; and a second cladding layer provided on the active layer, the second cladding layer being made of nitride semiconductor of a second conductivity type. The first and second barrier layers and the well layer contain indium. At least one of the first barrier layer and the second barrier layer has a thickness of 30 nm or more.
公开日期	2007-04-19
申请日期	2006-02-21
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83546]
专题	半导体激光器专利数据库
作者单位	KABUSHIKI KAISHA TOSHIBA
推荐引用方式 GB/T 7714	TANAKA, AKIRA,HONGO, CHIE,HARADA, YOSHIYUKI,et al. Semiconductor light emitting device. US20070086496A1. 2007-04-19.

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