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	Semiconductor laser
	KOBAYASHI ISAO; MITO IKUO
	1984-07-20
著作权人	NIPPON ELECTRIC CO
专利号	JP1984125686A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To effectively operate a current enclosing function even at high injection exciting level and to enable high output operation by containing a current blocking layer which is substantially equal in the forbidden band width to an active layer and thicker than the active layer in a current block structure multilayer semiconductor layer. CONSTITUTION:A mesa stripe 40 of (110) direction is formed by a photolithographic method and a chemical etching method with an etchant of hydrochloric acid on a (001) InP substrate Then, an N type InP buffer layer 2, an InGaAsP active layer 3 and a P type InP clad layer 4 are sequentially grown on the substrate 1 by a liquid phase growth method to form a double hetero structure crystal 4 Then, two parallel grooves 10, 11 are formed on the crystal 4 At this time, the positional relationship between the shape of the surface of the crystal 41 before etching as designated by broken and the grooves 10, 11 after etching is determined. Then, it is again introduced into a crystal growth furnace to sequentially grow in 2-phase solution method, P type InP and N type InP current enclosure layers 5, 6, a P type InP buried layer 7 and a P type InGaAsP contacting layer 8 sequentially.
公开日期	1984-07-20
申请日期	1983-01-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83472]
专题	半导体激光器专利数据库
作者单位	NIPPON ELECTRIC CO
推荐引用方式 GB/T 7714	KOBAYASHI ISAO,MITO IKUO. Semiconductor laser. JP1984125686A. 1984-07-20.

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