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	化合物半導体発光素子
	右田 雅人; 大家 彰; 椎木 正敏
	1997-05-02
著作权人	株式会社日立製作所
专利号	JP2643322B2
国家	日本
文献子类	授权发明
其他题名	化合物半導体発光素子
英文摘要	PURPOSE:To obtain an element with the desired light emitting wavelength by forming a distorted superlattice structure in such a way that II-VI compound semiconductor layers are epitaxially formed in plural numbers alternately with each other, and doping the semiconductor with impurity element which is given a conductivity type. CONSTITUTION:A buffer layer 5 is accumulated on the surface of a GaAs substrate 4, and then group VI material and group II material are made to grow alternately by ten layers for each so as to from a distorted superlattice structure. Next, by ion implantation using an SiO2 mask 9, to a p type region 2 nitrogen ions N 10 and to an n type region 3 iodine ions are implanted, respectively. Hereby, in the p-n region, undoped region 1 is formed at the interface. A light exit face 11 is covered with a mask, and accoring to the conductivity type of each end face, an n-type GaAs 6 and a p-type GaAs 7 are formed respectively by the MOCVD method, and orhmic electrodes 8 and 8' are formed respectively so as to complete the element structure. Further, the electrode 8 is made of InZn, and 8' is made of InSn. Hereby, carrier implantation type high efficiency visual light emitting element can be realized.
公开日期	1997-08-20
申请日期	1988-06-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83450]
专题	半导体激光器专利数据库
作者单位	株式会社日立製作所
推荐引用方式 GB/T 7714	右田 雅人,大家 彰,椎木 正敏. 化合物半導体発光素子. JP2643322B2. 1997-05-02.

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