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	High output semiconductor laser element
	YAMASHITA SHIGEO; KAJIMURA TAKASHI
	1989-09-28
著作权人	株式会社日立製作所
专利号	JP1989243489A
国家	日本
文献子类	发明申请
其他题名	High output semiconductor laser element
英文摘要	PURPOSE:To enable the title element to be actuated stably in lateral basic mode even at high output by a method wherein the semi-waveguide channel width is partly narrowed at a plurality of positions at least near one side and near central position while other regions are kept almost in even width. CONSTITUTION:The laser beams are distributed in the parallel direction with an active layer 3 corresponding to the effective waveguide channel width however the axis of a resonator is fixed to near central position by the parts in narrow waveguide channel width provided at least near end and near central position. Besides, the oscillation threshold gain in the lateral high order mode increases since narrow waveguide parts 13 inflict heavier loss on the lateral linear mode in low magnetic field intensity reaching peaks at both sides as well as on the lateral high order mode in considerable intensity distribution on both sides. Through these procedures, stable oscillation can be assured in the lateral basic mode even if the photospot size is enlarged by widening the effective stripe width. Furthermore, the enlargement of the spot size means the reduction of the photo power density per unit sectional space to solve the problem of end deterioration.
公开日期	1989-09-28
申请日期	1988-03-25
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83437]
专题	半导体激光器专利数据库
作者单位	株式会社日立製作所
推荐引用方式 GB/T 7714	YAMASHITA SHIGEO,KAJIMURA TAKASHI. High output semiconductor laser element. JP1989243489A. 1989-09-28.

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