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	Semiconductor laser device
	HAYASHI HIROSHI; YAMAMOTO OSAMU; MIYAUCHI NOBUYUKI; YAMAMOTO SABURO
	1987-06-19
著作权人	SHARP CORP
专利号	JP1987136891A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	PURPOSE:To obtain an internal reflection interference type laser which has a high reflection efficiency with a very simple composition by a method wherein, in a stripe-shape waveguide, a part of an active layer above a protruded part is made to be thinner than the other part. CONSTITUTION:On a substrate 1 on which a protruded part 2 is formed and stripe-shape grooves 3 and 4 are formed along the direction crossing the protruded part with a right angle, the 1st cladding layer 5, an active layer 6, the 2nd cladding layer 7 and a cap layer 8 are successively laminated by a liquid phase epitaxial growth method. A Zn diffused region which reaches the cladding layer 7 is formed only in the part directly above the stripe-shape grooves 3 and 4 to provide a conducting region. By making a part of the active layer 6 above the protruded part 2 thinner than the other part, a part of a laser beam propagating through the active layer 6 is reflected near the protruded part 2. Therefore, a total resonator with a resonator length L is divided into two internal resonators with respective resonator lengths l1 and l2. As this internal reflection interference type semiconductor laser has an intense vertical mode selectivity, the identical single vertical mode oscillation can be stabilized in a wide temperature range.
公开日期	1987-06-19
申请日期	1985-12-10
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/83152]
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	HAYASHI HIROSHI,YAMAMOTO OSAMU,MIYAUCHI NOBUYUKI,et al. Semiconductor laser device. JP1987136891A. 1987-06-19.

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