Photoinduced Broad-band Tunable Terahertz Absorber Based on a VO2 Thin Film

doi:10.1021/acsami.0c15297

	Photoinduced Broad-band Tunable Terahertz Absorber Based on a VO2 Thin Film
	Ren, Zhuang 2,6; Cheng, Long 2,6; Hu, Ling 1; Liu, Caixing 2,6; Jiang, Chengxin 7; Yang, Shige 2,6; Ma, Zongwei 3,6; Zhou, Chun 3,6; Wang, Haomin 5; Zhu, Xuebin 1
刊名	ACS APPLIED MATERIALS & INTERFACES
	2020-10-28
卷号	12
关键词	terahertz vanadium dioxide photoinduced tunable absorber antireflection pi-phase shift active multifunctional modulation
ISSN号	1944-8244
DOI	10.1021/acsami.0c15297
通讯作者	Sheng, Zhigao(zhigaosheng@hmfl.ac.cn)
英文摘要	The demand for terahertz (THz) communication and detection fuels continuous research for high performance of THz absorption materials. In addition to varying the materials and their structure passively, an alternative approach is to modulate a THz wave actively by tuning an external stimulus. Correlated oxides are ideal materials for this because the effects of a small external control parameter can be amplified by inner electronic correlations. Here, by utilizing an unpatterned strongly correlated electron oxide VO2 thin film, a photoinduced broad-band tunable THz absorber is realized first. The absorption, transmission, reflection, and phase of THz waves can all be actively controlled by an external pump laser above room temperature. By varying the laser fluence, the average broad-band absorption can be tuned from 18.9 to 74.7% and the average transmission can be tuned from 9.2 to 69.2%. Meanwhile, a broad-band antireflection is obtained at 5.6 mJ/cm(2), and a pi-phase shift of a reflected THz wave is achieved when the fluence increases greater than 5.7 mJ/cm(2). Apart from other modulators, the photoexcitation-assisted dual-phase competition is identified as the origin of this active THz multifunctional modulation. Our work suggests that advantages of controllable phase separation in strongly correlated electron systems could provide viable routes in the creation of active optical components for THz waves.
资助项目	National Key R&D Program of China[2017YFA0303603] ; National Key R&D Program of China[2016YFA0401803] ; National Key R&D Program of China[2017YFF0206106] ; National Natural Science Foundation of China (NSFC)[U2032218] ; National Natural Science Foundation of China (NSFC)[11574316] ; National Natural Science Foundation of China (NSFC)[U1532155] ; National Natural Science Foundation of China (NSFC)[51772317] ; National Natural Science Foundation of China (NSFC)[91964102] ; Key Research Program of Frontier Sciences, CAS[QYZDB-SSW-SLH011] ; President Foundation of Hefei Institutes of Physical Science, CAS[YZJJ2018QN16] ; CAS Pioneer Hundred Talents Program ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB30000000] ; High Magnetic Field Laboratory of Anhui Province
WOS关键词	PHASE-TRANSITION ; MEMORY DEVICE ; MODULATION ; ABSORPTION ; SPECTROSCOPY ; FABRICATION ; DESIGN ; DRIVEN
WOS研究方向	Science & Technology - Other Topics ; Materials Science
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000586868400058
资助机构	National Key R&D Program of China ; National Natural Science Foundation of China (NSFC) ; Key Research Program of Frontier Sciences, CAS ; President Foundation of Hefei Institutes of Physical Science, CAS ; CAS Pioneer Hundred Talents Program ; Strategic Priority Research Program of the Chinese Academy of Sciences ; High Magnetic Field Laboratory of Anhui Province
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/105481]
专题	中国科学院合肥物质科学研究院
通讯作者	Sheng, Zhigao
作者单位	1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Hefei 230026, Peoples R China 3.Chinese Acad Sci, Key Lab Photovolta & Energy Conservat Mat, Hefei 230031, Peoples R China 4.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Peoples R China 5.ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 200031, Peoples R China 6.Chinese Acad Sci, High Field Magnet Lab, Anhui Key Lab Condensed Matter Phys Extreme Condi, Hefei 230031, Peoples R China 7.Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
推荐引用方式 GB/T 7714	Ren, Zhuang,Cheng, Long,Hu, Ling,et al. Photoinduced Broad-band Tunable Terahertz Absorber Based on a VO2 Thin Film[J]. ACS APPLIED MATERIALS & INTERFACES,2020,12.
APA	Ren, Zhuang.,Cheng, Long.,Hu, Ling.,Liu, Caixing.,Jiang, Chengxin.,...&Sheng, Zhigao.(2020).Photoinduced Broad-band Tunable Terahertz Absorber Based on a VO2 Thin Film.ACS APPLIED MATERIALS & INTERFACES,12.
MLA	Ren, Zhuang,et al."Photoinduced Broad-band Tunable Terahertz Absorber Based on a VO2 Thin Film".ACS APPLIED MATERIALS & INTERFACES 12(2020).