Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties

doi:10.3390/ma13020417

	Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties
	Hui, Zhenzhen 1; Zuo, Xuzhong 2; Ye, Longqiang 1; Wang, Xuchun 1; Zhu, Xuebin 3
刊名	MATERIALS
	2020-01-02
卷号	13
关键词	chromium nitride thin films thickness-dependent electrical transport properties chemical solution deposition
DOI	10.3390/ma13020417
通讯作者	Hui, Zhenzhen(huizz@ahstu.edu.cn)
英文摘要	Thickness is a very important parameter with which to control the microstructures, along with physical properties in transition-metal nitride thin films. In work presented here, CrN films with different thicknesses (from 26 to 130 nm) were grown by chemical solution deposition. The films are pure phase and polycrystalline. Thickness dependence of microstructures and electrical transport behavior were studied. With the increase of films thickness, grain size and nitrogen content are increased, while resistivity, zero-field sensitivity and magnetoresistance are decreased. In the temperature range of 5-350 K, all samples exhibited semiconductor-like properties with d rho/dT < 0. For the range above and below the Neel temperature, the resistivity can be fitted by the thermal activation model and the two-dimensional weak localization (2D-WL) model, respectively. The ultra-low magnetoresistance at a low temperature under high magnetic fields with a large zero-field sensitivity was observed in the CrN thin films. The zero-field sensitivity can be effectively tuned to 10(-2) K-1 at 5 K with a magnetoresistance of less than 1% at 2 K under 14 T by reasonably controlling the thickness.
资助项目	National Natural Science Foundation of China[11804003] ; National Natural Science Foundation of China[51702002] ; Natural Science Foundation of Anhui Province[1808085QE141] ; Anhui Science and Technology University[HCYJ201705] ; Science and the Technology Major Project of Anhui Province[18030901087]
WOS关键词	GRAIN-GROWTH ; TEMPERATURE SENSOR ; MAGNETIC-FIELDS ; MAGNETORESISTANCE ; RESISTANCE ; TRANSITION ; BEHAVIOR
WOS研究方向	Materials Science
语种	英语
出版者	MDPI
WOS记录号	WOS:000515499900164
资助机构	National Natural Science Foundation of China ; Natural Science Foundation of Anhui Province ; Anhui Science and Technology University ; Science and the Technology Major Project of Anhui Province
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/103959]
专题	中国科学院合肥物质科学研究院
通讯作者	Hui, Zhenzhen
作者单位	1.Anhui Sci & Technol Univ, Coll Chem & Mat Engn, Fengyang 233100, Peoples R China 2.Anhui Sci & Technol Univ, Coll Elect & Elect Engn, Fengyang 233100, Peoples R China 3.Univ Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Hui, Zhenzhen,Zuo, Xuzhong,Ye, Longqiang,et al. Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties[J]. MATERIALS,2020,13.
APA	Hui, Zhenzhen,Zuo, Xuzhong,Ye, Longqiang,Wang, Xuchun,&Zhu, Xuebin.(2020).Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties.MATERIALS,13.
MLA	Hui, Zhenzhen,et al."Solution Processable CrN Thin Films: Thickness-Dependent Electrical Transport Properties".MATERIALS 13(2020).