Solution processed W-doped In2O3 thin films with high carrier mobility

doi:10.1016/j.ceramint.2019.09.201

	Solution processed W-doped In2O3 thin films with high carrier mobility
	Liu, Yanqiu 1,2; Zhu, Shunjin 1,2; Wei, Renhuai 1; Hu, Ling 1; Tang, Xianwu 1; Yang, Jie 1; Song, Wenhai 1; Dai, Jianming 1; Zhu, Xuebin 1; Sun, Yuping 1,3
刊名	CERAMICS INTERNATIONAL
	2020-02-01
卷号	46
关键词	W-doped In2O3 Chemical solution deposition Thin film
ISSN号	0272-8842
DOI	10.1016/j.ceramint.2019.09.201
通讯作者	Wei, Renhuai(rhwei@issp.ac.cn) ; Zhu, Xuebin(xbzhu@issp.ac.cn)
英文摘要	Transparent conducting (TC) donor-doped In2O3 thin films are the critical components in photovoltaic, display and solid-state lighting fields. In2O3 -based TC films with high carrier mobility are required for reducing the power consumption of devices. Meanwhile, a high near-infrared (NIR) transparency can significantly improve the power conversion efficiency in solar cells. Here, W-doped In2O3 thin films with high carrier mobility and NIR transparency were obtained through a facile solution process, which is suitable for large-scale thin film fabrication. The effects of W concentration (0.3 at% to 0.7 at%) on the microstructures, electrical and optical properties of In2O3 thin films are investigated in detail. It is found that the 0.5% W-doped In2O3 thin film exhibits high carrier mobility of 23 cm(2)V(-1) s(-1) at a carrier concentration of 5.02 x 10(20) cm(-3), showing a high NIR transmittance over 82% and low sheet resistance of 32 Omega/sq. The solution processed W-doped In2O3 thin films with low sheet resistance and high NIR transparency can be potentially used as transparent electrodes for solar cells.
资助项目	National Natural Science Foundation of China[11604337]
WOS关键词	ELECTRICAL-PROPERTIES ; OPTICAL-PROPERTIES ; TRANSPARENT ; TEMPERATURE ; TRANSPORT ; TUNGSTEN ; DEPENDENCE ; DEPOSITION ; GROWTH
WOS研究方向	Materials Science
语种	英语
出版者	ELSEVIER SCI LTD
WOS记录号	WOS:000527383100106
资助机构	National Natural Science Foundation of China
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/103365]
专题	中国科学院合肥物质科学研究院
通讯作者	Wei, Renhuai; Zhu, Xuebin
作者单位	1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 2.Univ Sci & Technol China, Hefei 230026, Peoples R China 3.Chinese Acad Sci, High Magnet Field Lab, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Liu, Yanqiu,Zhu, Shunjin,Wei, Renhuai,et al. Solution processed W-doped In2O3 thin films with high carrier mobility[J]. CERAMICS INTERNATIONAL,2020,46.
APA	Liu, Yanqiu.,Zhu, Shunjin.,Wei, Renhuai.,Hu, Ling.,Tang, Xianwu.,...&Sun, Yuping.(2020).Solution processed W-doped In2O3 thin films with high carrier mobility.CERAMICS INTERNATIONAL,46.
MLA	Liu, Yanqiu,et al."Solution processed W-doped In2O3 thin films with high carrier mobility".CERAMICS INTERNATIONAL 46(2020).