Self-Powered Filterless Narrow-Band p-n Heterojunction Photodetector for Low Background Limited Near-Infrared Image Sensor Application

doi:10.1021/acsami.0c02827

	Self-Powered Filterless Narrow-Band p-n Heterojunction Photodetector for Low Background Limited Near-Infrared Image Sensor Application
	Wang, Li 2; Li, Zhen 2; Li, Ming 2; Li, Shao 3; Lu, Yingchun 2; Qi, Ning 2; Zhang, Jian 1; Xie, Chao 2; Wu, Chunyan 2; Luo, Lin-Bao 2
刊名	ACS APPLIED MATERIALS & INTERFACES
	2020-05-13
卷号	12
关键词	p-n heterojunction near infrared light narrow band photodetector spectral selectivity image sensing
ISSN号	1944-8244
DOI	10.1021/acsami.0c02827
通讯作者	Zhang, Jian(zhangjian@issp.ac.cn) ; Luo, Lin-Bao(luolb@hfut.edu.cn)
英文摘要	Photonic detection with narrow spectrum selectivity is very important to eliminate the signal from obtrusive light, which can improve the anti-interference ability of the infrared imaging system. While the self-driving effect inherent to the p-n junction is very attractive in optic-electronic integration, the application of the p-n junction in narrow-band photodetectors is limited by the usual broad absorption range. In this work, a self-powered filterless narrowband near-infrared photodetector based on CuGaTe2/silicon p-n junction was reported. The as-fabricated photodetector exhibited typical narrow-band response which shall be ascribed to the slightly smaller band gap of Si than CuGaTe2 and the restricted photocurrent generation region in the p-n heterojunction by optimizing CuGaTe2 thickness. It is observed that when the thickness of CuGaTe2 film is 143 nm, the device exhibits a response peak centered around 1050 nm with a full-width at half-maximum of similar to 118 nm. Further device analysis reveals a specific detectivity of similar to 10(12) Jones and a responsivity of 114 mA/W under 1064 nm illumination at zero bias. It was also found that an image system based on the narrowband CuGaTe2/Si photodetector showed high noise immunity for its spectral selective characteristics.
资助项目	National Natural Science Foundation of China (NSFC)[61575059] ; National Natural Science Foundation of China (NSFC)[61675062] ; National Natural Science Foundation of China (NSFC)[51902078] ; Fundamental Research Funds for the Central Universities[JZ2018HGPB0275] ; Fundamental Research Funds for the Central Universities[JZ2018HGTA0220] ; Fundamental Research Funds for the Central Universities[JZ2018HGXC0001] ; National College Students' innovation and entrepreneurship training program[201710359060]
WOS关键词	HIGH-PERFORMANCE ; CUGATE2 ; GROWTH ; PHOTODIODES ; ABSORPTION ; EFFICIENCY
WOS研究方向	Science & Technology - Other Topics ; Materials Science
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000535246100068
资助机构	National Natural Science Foundation of China (NSFC) ; Fundamental Research Funds for the Central Universities ; National College Students' innovation and entrepreneurship training program
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/103183]
专题	中国科学院合肥物质科学研究院
通讯作者	Zhang, Jian; Luo, Lin-Bao
作者单位	1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 2.Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Peoples R China 3.Yanshan Univ, State Key Lab Metastable Mat Sci & Technol, Qinhuangdao 066004, Hebei, Peoples R China
推荐引用方式 GB/T 7714	Wang, Li,Li, Zhen,Li, Ming,et al. Self-Powered Filterless Narrow-Band p-n Heterojunction Photodetector for Low Background Limited Near-Infrared Image Sensor Application[J]. ACS APPLIED MATERIALS & INTERFACES,2020,12.
APA	Wang, Li.,Li, Zhen.,Li, Ming.,Li, Shao.,Lu, Yingchun.,...&Luo, Lin-Bao.(2020).Self-Powered Filterless Narrow-Band p-n Heterojunction Photodetector for Low Background Limited Near-Infrared Image Sensor Application.ACS APPLIED MATERIALS & INTERFACES,12.
MLA	Wang, Li,et al."Self-Powered Filterless Narrow-Band p-n Heterojunction Photodetector for Low Background Limited Near-Infrared Image Sensor Application".ACS APPLIED MATERIALS & INTERFACES 12(2020).