| VGF growth of high quality InAs single crystals with low dislocation density | |
| Jun Yang; Wei Lu; Manlong Duan; Hui Xie; Guiying Shen; Jingmin Liu; Zhiyuan Dong; Youwen Zhao | |
| 刊名 | Journal of Crystal Growth
 |
| 2019 | |
| 卷号 | 531页码:125350 |
| 语种 | 英语 |
| 内容类型 | 期刊论文 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/29566]  |
| 专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
| 推荐引用方式 GB/T 7714 | Jun Yang;Wei Lu;Manlong Duan;Hui Xie;Guiying Shen;Jingmin Liu;Zhiyuan Dong;Youwen Zhao. VGF growth of high quality InAs single crystals with low dislocation density[J]. Journal of Crystal Growth,2019,531:125350. |
| APA | Jun Yang;Wei Lu;Manlong Duan;Hui Xie;Guiying Shen;Jingmin Liu;Zhiyuan Dong;Youwen Zhao.(2019).VGF growth of high quality InAs single crystals with low dislocation density.Journal of Crystal Growth,531,125350. |
| MLA | Jun Yang;Wei Lu;Manlong Duan;Hui Xie;Guiying Shen;Jingmin Liu;Zhiyuan Dong;Youwen Zhao."VGF growth of high quality InAs single crystals with low dislocation density".Journal of Crystal Growth 531(2019):125350. |
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